发明授权
- 专利标题： SOI wafer and its manufacturing method
- 专利标题（中）： SOI晶片及其制造方法
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申请号： US10570668申请日： 2004-09-08
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公开(公告)号： US07544583B2公开(公告)日： 2009-06-09
- 发明人: Akihiko Endo , Nobuyuki Morimoto
- 申请人： Akihiko Endo , Nobuyuki Morimoto
- 申请人地址： JP Tokyo
- 专利权人： Sumco Corporation
- 当前专利权人： Sumco Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Greenblum & Bernstein, P.L.C.
- 优先权： JP2003-315990 20030908
- 国际申请： PCT/JP2004/013070 WO 20040908
- 国际公布： WO2005/024918 WO 20050317
- 主分类号： H01L21/30
- IPC分类号： H01L21/30
摘要：
Since a supporting wafer contains nitrogen of 1×1014 atmos/cm3 and interstitial oxygen atom concentration, Oi, (old ASTM) of 13×1017 atoms/cm3, therefore a part of the metal impurities in an active layer wafer and the metal impurities in a bonded wafer can be captured by the BMD and the OSF in the wafer during the heat treatment after the bonding. Consequently, the contamination from the metal impurities in the active layer can be reduced.
公开/授权文献
- US20070026637A1 Soi wafer and its manufacturing method 公开/授权日：2007-02-01
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