Invention Grant
- Patent Title: Tantalum lanthanide oxynitride films
- Patent Title (中): 钽镧系氮氧化物薄膜
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Application No.: US11514545Application Date: 2006-08-31
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Publication No.: US07544604B2Publication Date: 2009-06-09
- Inventor: Leonard Forbes , Kie Y. Ahn , Arup Bhattacharyya
- Applicant: Leonard Forbes , Kie Y. Ahn , Arup Bhattacharyya
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
Electronic apparatus and methods of forming the electronic apparatus include a tantalum lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The tantalum lanthanide oxynitride film may be structured as one or more monolayers. Metal electrodes may be disposed on a dielectric containing a tantalum lanthanide oxynitride film.
Public/Granted literature
- US20080054330A1 Tantalum lanthanide oxynitride films Public/Granted day:2008-03-06
Information query
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