发明授权
- 专利标题： Method for integrating liner formation in back end of line processing
- 专利标题（中）： 在线处理后端整合衬垫形成的方法
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申请号： US11673276申请日： 2007-02-09
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公开(公告)号： US07544609B2公开(公告)日： 2009-06-09
- 发明人: Matthew S. Angyal , Habib Hichri , Christopher J. Penny , David K. Watts
- 申请人： Matthew S. Angyal , Habib Hichri , Christopher J. Penny , David K. Watts
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Rosa Suazo
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A method for integrating cap liner formation in back-end-of-line (BEOL) processing of a semiconductor device includes forming a trench structure within an insulating layer of the semiconductor device, depositing a first liner material over a top surface of the insulating layer, including sidewall and bottom surfaces of the trench, and partially filling the trench with a wiring metal material to a height corresponding to a final intended line height. A second liner material is over the wiring metal material, and a sacrificial fill material is formed over the second liner material. The sacrificial fill is planarized down to the level of the second liner material over the wiring metal material partially filling the trench, wherein a remaining portion of the second liner material defines a cap liner of the wiring metal.