发明授权
- 专利标题： Semiconductor capacitor structure and method for manufacturing the same
- 专利标题（中）： 半导体电容器结构及其制造方法
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申请号： US11312952申请日： 2005-12-19
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公开(公告)号： US07544985B2公开(公告)日： 2009-06-09
- 发明人: Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
- 申请人： Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Marger Johnson & McCollom, P.C.
- 优先权： KR2003-56009 20030813
- 主分类号： H01L27/108
- IPC分类号： H01L27/108
摘要：
In one embodiment, a semiconductor device comprises a base and a tapered wall formed on the base. The wall has a midline and also has an inner sidewall and an outer sidewall. The inner sidewall and the outer sidewall are substantially symmetrical with each other in relation to the midline. Thus, the reliability of the semiconductor capacitor structure can be improved and the throughput can be increased. Also, further scaling down of semiconductor devices can be facilitated with the principles of the present invention.