发明授权
- 专利标题： Word lines for memory cells
- 专利标题（中）： 记忆单元的字线
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申请号： US11072159申请日： 2005-03-04
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公开(公告)号： US07545009B2公开(公告)日： 2009-06-09
- 发明人: Ravi Iyer , Yongjun Jeff Hu , Luan Tran , Brent Gilgen
- 申请人： Ravi Iyer , Yongjun Jeff Hu , Luan Tran , Brent Gilgen
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Leffert Jay & Polglaze, P.A.
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
Various embodiments of the invention described herein reduce contact resistance to a silicon-containing material using a first refractory metal material overlying the silicon-containing material and a second refractory metal material overlying the first refractory metal material. Each refractory metal material is a conductive material containing a refractory metal and an impurity. The first refractory metal material is a metal-rich material, containing a level of its impurity at less than a stoichiometric level. The second refractory metal material has a lower affinity for the impurities than does the first refractory metal material. The second refractory metal material can thus serve as an impurity donor during an anneal or other exposure to heat. This net migration of the impurities to the first refractory metal material limits growth of a metal silicide interface between the first refractory metal material and the underlying silicon-containing material, thereby providing ohmic contact with attendant thermal tolerance.
公开/授权文献
- US20050161721A1 Word lines for memory cells 公开/授权日：2005-07-28
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