发明授权
- 专利标题： Techniques for patterning features in semiconductor devices
- 专利标题（中）： 在半导体器件中构图特征的技术
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申请号： US11337411申请日： 2006-01-23
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公开(公告)号： US07545041B2公开(公告)日： 2009-06-09
- 发明人: Scott D. Allen , Katherina E. Babich , Steven J. Holmes , Arpan P. Mahorowala , Dirk Pfeiffer , Richard Stephan Wise
- 申请人： Scott D. Allen , Katherina E. Babich , Steven J. Holmes , Arpan P. Mahorowala , Dirk Pfeiffer , Richard Stephan Wise
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Ryan, Mason & Lewis, LLP
- 代理商 Daniel P. Morris, Esq.
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
Techniques for semiconductor processing are provided. In one aspect, a method for patterning one or more features in a semiconductor device comprises the following step. At least one critical dimension of the one or more features is reduced during etching of the antireflective material. A lithographic structure is also provided.
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