Invention Grant
- Patent Title: Internal voltage generation circuit
- Patent Title (中): 内部电压产生电路
-
Application No.: US11526818Application Date: 2006-09-26
-
Publication No.: US07545203B2Publication Date: 2009-06-09
- Inventor: Sang-Jin Byeon , Seok-Cheol Yoon
- Applicant: Sang-Jin Byeon , Seok-Cheol Yoon
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor, Inc.
- Current Assignee: Hynix Semiconductor, Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Mannava & Kang P.C.
- Priority: KR10-2005-0091668 20050929; KR10-2005-0132495 20051228
- Main IPC: G05F1/46
- IPC: G05F1/46 ; H02M3/07

Abstract:
An inter voltage generation circuit includes a pumping voltage generator to generate a pumping voltage, a level comparator to compare the pumping voltage level with a peripheral voltage level and output an enable signal depending on the comparison result, and a peripheral voltage generator to output a pumping enable signal according to the enable signal and generate a peripheral voltage according to the enable signal.
Public/Granted literature
- US20070147140A1 Internal voltage generation circuit Public/Granted day:2007-06-28
Information query
IPC分类: