发明授权
US07545423B2 Image sensor having a passivation layer exposing at least a main pixel array region and methods of fabricating the same
有权
具有暴露至少主像素阵列区域的钝化层的图像传感器及其制造方法
- 专利标题: Image sensor having a passivation layer exposing at least a main pixel array region and methods of fabricating the same
- 专利标题(中): 具有暴露至少主像素阵列区域的钝化层的图像传感器及其制造方法
-
申请号: US11044135申请日: 2005-01-27
-
公开(公告)号: US07545423B2公开(公告)日: 2009-06-09
- 发明人: Young Hoon Park , Ki Hong Kim , Bum Suk Kim , Jeong Hoon Bae , Yu Jin Ahn , Jung Chak Ahn , Soo Cheol Lee , Yong Jei Lee , Sung In Hwang
- 申请人: Young Hoon Park , Ki Hong Kim , Bum Suk Kim , Jeong Hoon Bae , Yu Jin Ahn , Jung Chak Ahn , Soo Cheol Lee , Yong Jei Lee , Sung In Hwang
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Mills & Onello, LLP.
- 优先权: KR10-2004-0055760 20040716
- 主分类号: H04N5/335
- IPC分类号: H04N5/335 ; H04N3/14
摘要:
A CMOS image sensor with improved sensitivity includes a main pixel array region of an active pixel array region formed on a semiconductor substrate. A passivation layer is formed over the sensor, and it is at least partially removed from the main pixel array region, such that incident light being detected by the main pixel array does not pass through the passivation layer. Optical absorption and refraction caused by the material of the passivation layer are eliminated, resulting in an image sensor with improved optical sensitivity.
公开/授权文献
信息查询