Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US11824423Application Date: 2007-06-29
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Publication No.: US07545687B2Publication Date: 2009-06-09
- Inventor: Jong-Won Lee , Sung-Kwon Cho
- Applicant: Jong-Won Lee , Sung-Kwon Cho
- Applicant Address: KR
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR
- Agency: Blakely, Sokoloff, Taylor & Zafman
- Priority: KR10-2006-0083558 20060831
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A semiconductor memory device checks a RAS timing to recognize and set an operation timing of the semiconductor memory device. The semiconductor memory device includes an input buffer, a RAS timing controller and a bank controller. The input buffer transmits a RAS timing test signal. The RAS timing controller generates a RAS timing signal. The bank controller controls a refresh operation timing in response to an output of the input buffer in a test mode and the RAS timing signal in a normal mode.
Public/Granted literature
- US20080056036A1 Semiconductor memory device Public/Granted day:2008-03-06
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