Invention Grant
US07547568B2 Electrical conditioning of MEMS device and insulating layer thereof
失效
MEMS器件的电气调节及其绝缘层
- Patent Title: Electrical conditioning of MEMS device and insulating layer thereof
- Patent Title (中): MEMS器件的电气调节及其绝缘层
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Application No.: US11360131Application Date: 2006-02-22
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Publication No.: US07547568B2Publication Date: 2009-06-16
- Inventor: Chen-Jean Chou , Chun-chen Wu , Patrick F. Brinkley
- Applicant: Chen-Jean Chou , Chun-chen Wu , Patrick F. Brinkley
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee Address: US CA San Diego
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method of fabricating a MEMS device includes conditioning of an insulating layer by applying a voltage across the insulating layer via a conductive sacrificial layer for a period of time, prior to removal of the conductive sacrificial layer. This conditioning process may be used to saturate or stabilize charge accumulated within the insulating layer. The resistance across the insulating layer may also be measured to detect possible defects in the insulating layer.
Public/Granted literature
- US20070196944A1 Electrical conditioning of MEMS device and insulating layer thereof Public/Granted day:2007-08-23
Information query
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