发明授权
- 专利标题： UV assisted thermal processing
- 专利标题（中）： UV辅助热处理
-
申请号： US11414869申请日： 2006-05-01
-
公开(公告)号： US07547633B2公开(公告)日： 2009-06-16
- 发明人: Joseph Michael Ranish , Yoshitaka Yokota
- 申请人： Joseph Michael Ranish , Yoshitaka Yokota
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson & Sheridan
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
The present invention provides methods and apparatus for performing thermal processes to a semiconductor substrate. Thermal processing chambers of the present invention comprise two different energy sources, such as an infrared radiation source and a UV radiation source. The UV radiation source and the infrared radiation source may be used alone or in combination to supply heat, activate electronic, or create active species inside the thermal processing chamber.
公开/授权文献
- US20080067416A1 UV assisted thermal processing 公开/授权日：2008-03-20
信息查询
IPC分类:
