发明授权
US07550311B2 Near-field optical probe based on SOI substrate and fabrication method thereof
失效
基于SOI衬底的近场光探针及其制造方法
- 专利标题： Near-field optical probe based on SOI substrate and fabrication method thereof
- 专利标题（中）： 基于SOI衬底的近场光探针及其制造方法
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申请号： US11633820申请日： 2006-12-05
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公开(公告)号： US07550311B2公开(公告)日： 2009-06-23
- 发明人: Eunkyoung Kim , Sung Q Lee , Kang Ho Park
- 申请人： Eunkyoung Kim , Sung Q Lee , Kang Ho Park
- 申请人地址： KR Daejeon
- 专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人地址： KR Daejeon
- 代理机构： Ladas & Parry LLP
- 优先权： KR10-2005-0118779 20051207; KR10-2006-0085823 20060906
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; G01B7/00
摘要：
Provided is near-field optical probe including: a cantilever arm support portion that is formed of a lower silicon layer of a silicon-on-insulator (SOI) substrate, the cantilever arm support portion having a through hole formed therein at a side of the lower silicon layer; and a cantilever arm forming of a junction oxidation layer pattern and an upper silicon layer pattern on the SOI substrate that are supported on an upper surface of the lower silicon layer and each have a smaller hole than the through hole, a silicon oxidation layer pattern having a tip including an aperture at a vertical end, corresponding with the hole on the upper silicon layer pattern, and an optical transmission prevention layer that is formed on the silicon oxidation layer pattern and does not cover the aperture.