发明授权
- 专利标题： Deep junction SOI MOSFET with enhanced edge body contacts
- 专利标题（中）： 具有增强的边缘体接触的深结SOI MOSFET
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申请号： US11564352申请日： 2006-11-29
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公开(公告)号： US07550330B2公开(公告)日： 2009-06-23
- 发明人: Thomas W. Dyer , Zhijiong Luo , Jack A. Mandelman
- 申请人： Thomas W. Dyer , Zhijiong Luo , Jack A. Mandelman
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Joseph P. Abate, Esq.
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/84
摘要：
A semiconductor structure is provided that has body contacts that are located at the edges of the device channel and a buried insulating region under the device channel that is shallower than the buried insulating regions under the source/drain junctions. A method of forming such a semiconductor structure is also described. The inventive method provides for self-alignment of the various features mentioned above with the gate conductor of the structure.
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