Invention Grant
- Patent Title: Electron beam device and its control method
- Patent Title (中): 电子束装置及其控制方法
-
Application No.: US11520605Application Date: 2006-09-14
-
Publication No.: US07550724B2Publication Date: 2009-06-23
- Inventor: Takashi Ichimura , Takeshi Ogashiwa , Toshihide Agemura , Kenji Aoki
- Applicant: Takashi Ichimura , Takeshi Ogashiwa , Toshihide Agemura , Kenji Aoki
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-266931 20050914
- Main IPC: G01N23/00
- IPC: G01N23/00

Abstract:
An electron beam device includes an electron gun section having an internal space kept at an ultrahigh vacuum level for generating a primary electron beam, a mirror section having an internal space kept at a vacuum level lower than that of the electron gun section for scanning a specimen with an electron probe of the primary electron beam generated in the electron gun section and focused on the specimen, a differential exhaust diaphragm for providing communication in internal space between the electron gun section and the mirror section and passing the primary electron beam, and a control section for controlling respective constituent elements in the electron beam device. A diaphragm mechanism having a plurality of different diaphragm aperture diameters is provided between a second anode and a first condenser lens.
Public/Granted literature
- US20070057185A1 Electron beam device and its control method Public/Granted day:2007-03-15
Information query