发明授权
- 专利标题: Multi-bit flash memory device and memory cell array
- 专利标题(中): 多位闪存设备和存储单元阵列
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申请号: US11637791申请日: 2006-12-13
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公开(公告)号: US07551480B2公开(公告)日: 2009-06-23
- 发明人: Ki-Tae Park , Ki-Nam Kim , Yeong-Taek Lee
- 申请人: Ki-Tae Park , Ki-Nam Kim , Yeong-Taek Lee
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Volentine & Whitt, PLLC
- 优先权: KR10-2006-0088705 20060913
- 主分类号: G11C11/34
- IPC分类号: G11C11/34
摘要:
A flash memory device comprises a plurality of memory blocks. A selected memory block among the plurality of memory blocks includes 2n pages of data. The selected memory block includes different types of memory cells capable of storing different numbers of bits.
公开/授权文献
- US20080062763A1 Multi-bit flash memory device and memory cell array 公开/授权日:2008-03-13