Invention Grant
- Patent Title: Silicon wafer laser processing method and laser beam processing machine
- Patent Title (中): 硅晶片激光加工方法和激光束加工机
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Application No.: US11242019Application Date: 2005-10-04
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Publication No.: US07553777B2Publication Date: 2009-06-30
- Inventor: Yusuke Nagai , Yukio Morishige , Yosuke Watanabe
- Applicant: Yusuke Nagai , Yukio Morishige , Yosuke Watanabe
- Applicant Address: JP Tokyo
- Assignee: Disco Corporation
- Current Assignee: Disco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2004-294473 20041007
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A silicon wafer laser processing method for forming a deteriorated layer along dividing lines formed on a silicon wafer in the inside of the silicon wafer by applying a laser beam along the dividing lines, wherein the wavelength of the laser beam is set to 1,100 to 2,000 nm.
Public/Granted literature
- US20060079069A1 Silicon wafer laser processing method and laser beam processing machine Public/Granted day:2006-04-13
Information query
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