发明授权
- 专利标题: Process for producing an aluminum nitride sintered body
- 专利标题(中): 氮化铝烧结体的制造方法
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申请号: US12190787申请日: 2008-08-13
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公开(公告)号: US07553788B2公开(公告)日: 2009-06-30
- 发明人: Yukihiro Kanechika , Masanobu Azuma
- 申请人: Yukihiro Kanechika , Masanobu Azuma
- 申请人地址: JP Shunan-shi, Yamaguchi
- 专利权人: Tokuyama Corporation
- 当前专利权人: Tokuyama Corporation
- 当前专利权人地址: JP Shunan-shi, Yamaguchi
- 代理机构: The Webb Law Firm
- 主分类号: C04B35/581
- IPC分类号: C04B35/581
摘要:
An aluminum nitride sintered body having resistance to plasma gas and high thermal conduction and having excellent optical properties. The aluminum nitride sintered body of the present invention is characterized in that the proportion of positrons which are annihilated within a period of 180 ps (picoseconds) in the aluminum nitride crystal, as determined in the defect analysis using a positron annihilation method, is not less than 90%, and the sintered body preferably has a thermal conductivity of not less than 200 W/mK.
公开/授权文献
- US20080300128A1 Process for Producing an Aluminum Nitride Sintered Body 公开/授权日:2008-12-04
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