Invention Grant
US07554192B2 Semiconductor device having filler with thermal conductive particles
有权
具有带有导热颗粒的填料的半导体器件
- Patent Title: Semiconductor device having filler with thermal conductive particles
- Patent Title (中): 具有带有导热颗粒的填料的半导体器件
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Application No.: US11553235Application Date: 2006-10-26
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Publication No.: US07554192B2Publication Date: 2009-06-30
- Inventor: Masuo Koga , Tetsuo Mizoshiri , Yukimasa Hayashida
- Applicant: Masuo Koga , Tetsuo Mizoshiri , Yukimasa Hayashida
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- Priority: JP2006-184568 20060704
- Main IPC: H01L23/34
- IPC: H01L23/34

Abstract:
A semiconductor device that includes an insulating substrate having an upper conductor formed on an upper surface thereof and a lower conductor formed on a lower surface of the insulating substrate. The device also includes a semiconductor element mounted on the upper surface of the insulating substrate with an under-element solder therebetween. The device further includes a heat sink whereon the insulating substrate is mounted with an under-substrate solder therebetween. The device additionally includes a silicone gel covering the semiconductor element, the under-element solder, and the upper conductor. In addition, the device includes a filler covering the lower conductor and the under-substrate solder, without covering the semiconductor element, the under-element solder, and the upper conductor, and having a thermal conductivity larger than a thermal conductivity of air and a fluidity higher than a fluidity of the silicone gel.
Public/Granted literature
- US20080006932A1 SEMICONDUCTOR DEVICE Public/Granted day:2008-01-10
Information query
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