发明授权
- 专利标题： Semiconductor constructions and semiconductor device fabrication methods
- 专利标题（中）： 半导体结构和半导体器件制造方法
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申请号： US11965445申请日： 2007-12-27
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公开(公告)号： US07560310B2公开(公告)日： 2009-07-14
- 发明人: Louis L. C. Hsu , Rajiv V. Joshi , Jack Allan Mandelman
- 申请人： Louis L. C. Hsu , Rajiv V. Joshi , Jack Allan Mandelman
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： McGinn IP Law Group, PLLC
- 代理商 Brian P. Verminski
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method of fabricating a semiconductor device includes etching a substrate formed on a backside of a semiconductor wafer to form a recess in the substrate, and forming a sputter film in the recess, the sputter film including a first material having a coefficient of thermal expansion (CTE) which is at least substantially equal to a CTE of the substrate, and a second material having a thermal conductivity which is greater than a thermal conductivity of the substrate.