- 专利标题: Semiconductor device and gate structure having a composite dielectric layer and methods of manufacturing the same
-
申请号: US11366453申请日: 2006-03-03
-
公开(公告)号: US07560349B2公开(公告)日: 2009-07-14
- 发明人: Ki-Yeon Park , Kyoung-Ryul Yoon , Dae-Sik Choi , Han-Mei Choi , Seung-Hwan Lee
- 申请人: Ki-Yeon Park , Kyoung-Ryul Yoon , Dae-Sik Choi , Han-Mei Choi , Seung-Hwan Lee
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2005-0018415 20050305
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L21/3205
摘要:
A semiconductor device and/or gate structure having a composite dielectric layer and methods of manufacturing the same is provided. In the semiconductor device, gate structure, and methods provided, a first conductive layer may be formed on a substrate. A native oxide layer formed on the first conductive layer may be removed. A surface of the first conductive layer may be nitrided so that the surface may be altered into a nitride layer. A composite dielectric layer including the first and/or second dielectric layers may be formed on the nitride layer. A second conductive layer may be formed on the composite dielectric layer. The first dielectric layer may include a material having a higher dielectric constant. The second dielectric layer may be capable of suppressing crystallization of the first dielectric layer.