发明授权
- 专利标题: Process of forming an electronic device including a doped semiconductor layer
- 专利标题(中): 形成包括掺杂半导体层的电子器件的工艺
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申请号: US11835643申请日: 2007-08-08
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公开(公告)号: US07560354B2公开(公告)日: 2009-07-14
- 发明人: Stefan Zollner , Bich-Yen Nguyen
- 申请人: Stefan Zollner , Bich-Yen Nguyen
- 申请人地址: US TX Austin
- 专利权人: Freescale Semiconductor, Inc.
- 当前专利权人: Freescale Semiconductor, Inc.
- 当前专利权人地址: US TX Austin
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
A process can include forming a doped semiconductor layer over a substrate. The process can also include performing an action that reduces a dopant content along an exposed surface of a workpiece that includes the substrate and the doped semiconductor layer. The action is performed after forming the doped semiconductor layer and before the doped semiconductor layer is exposed to a room ambient. In particular embodiments, the doped semiconductor layer includes a semiconductor material that includes a combination of at least two elements selected from the group consisting of C, Si, and Ge, and the doped semiconductor layer also includes a dopant, such as phosphorus, arsenic, boron, or the like. The action can include forming an encapsulating layer, exposing the doped semiconductor layer to radiation, annealing the doped semiconductor layer, or any combination thereof.