Invention Grant
- Patent Title: Method of semiconductor thin film crystallization and semiconductor device fabrication
- Patent Title (中): 半导体薄膜结晶和半导体器件制造方法
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Application No.: US11226679Application Date: 2005-09-14
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Publication No.: US07560365B2Publication Date: 2009-07-14
- Inventor: Jia-Xing Lin , Chi-Lin Chen
- Applicant: Jia-Xing Lin , Chi-Lin Chen
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Alston & Bird LLP
- Main IPC: H01L21/36
- IPC: H01L21/36 ; H01L21/20
Abstract:
A method for fabricating a semiconductor device includes providing a substrate, forming an amorphous silicon layer over the substrate, forming a heat retaining layer on the amorphous silicon layer, patterning the heat retaining layer, and irradiating the patterned heat retaining layer.
Public/Granted literature
- US20070054473A1 Method of semiconductor thin film crystallization and semiconductor device fabrication Public/Granted day:2007-03-08
Information query
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