发明授权
- 专利标题： Etching systems and processing gas specie modulation
- 专利标题（中）： 蚀刻系统和加工气体调制
-
申请号： US10263981申请日： 2002-10-03
-
公开(公告)号： US07560385B2公开(公告)日： 2009-07-14
- 发明人: Francis G. Celii , Ping Jiang
- 申请人： Francis G. Celii , Ping Jiang
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A method and system for etching a substrate control selectivity of the etch process by modulating the gas specie of the reactants. The gas specie selectively form and etch a buffer layer that protects underlying etch stop materials thereby providing highly selective etch processes.
公开/授权文献
- US20030073312A1 Etching systems and processing gas specie modulation 公开/授权日：2003-04-17