- 专利标题: Nonvolatile semiconductor memory
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申请号: US12010932申请日: 2008-01-31
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公开(公告)号: US07560766B2公开(公告)日: 2009-07-14
- 发明人: Minori Kajimoto , Mitsuhiro Noguchi , Hiroshi Maejima , Takahiko Hara
- 申请人: Minori Kajimoto , Mitsuhiro Noguchi , Hiroshi Maejima , Takahiko Hara
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JPP2003-379988 20031110
- 主分类号: H01L29/788
- IPC分类号: H01L29/788
摘要:
A nonvolatile semiconductor memory according to the present invention includes memory cell units, which include data select lines formed in parallel to each other, data transfer lines crossing the data select lines and aligned in parallel to each other, and electrically rewritable memory cell transistors disposed at intersections of the data transfer lines and the data select lines. It further includes: a memory cell array block in which the memory cell units are disposed along the data select lines; first source lines, connected to one end of the memory cell units, and aligned along the data select lines; and second source lines electrically connected to the first source lines, and disposed along the data select lines.
公开/授权文献
- US20080149993A1 Nonvolatile semiconductor memory 公开/授权日:2008-06-26