发明授权
US07560788B2 Microelectromechanical system pressure sensor and method for making and using
失效
微机电系统压力传感器及其制作与使用方法
- 专利标题: Microelectromechanical system pressure sensor and method for making and using
- 专利标题(中): 微机电系统压力传感器及其制作与使用方法
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申请号: US10945399申请日: 2004-09-20
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公开(公告)号: US07560788B2公开(公告)日: 2009-07-14
- 发明人: Jeffrey Fortin , Guanghua (George) Wu , Kanakasabapathi Subramanian
- 申请人: Jeffrey Fortin , Guanghua (George) Wu , Kanakasabapathi Subramanian
- 申请人地址: US NY Niskayuna
- 专利权人: General Electric Company
- 当前专利权人: General Electric Company
- 当前专利权人地址: US NY Niskayuna
- 代理商 Richard A. DeCristofaro
- 主分类号: H01L29/78
- IPC分类号: H01L29/78
摘要:
According to some embodiments, a conducting layer is formed on a first wafer. An insulating layer is formed on a second wafer. The insulating layer includes a cavity and a conducting area may be formed in the second wafer proximate to the cavity. The side of the conducting layer opposite the first wafer is bonded to the side of the insulating layer opposite the second wafer. At least some of the first wafer is then removed, without removing at least some of the conducting layer, to form a conducting diaphragm that is substantially parallel to the second wafer. In this way, an amount of capacitance between the diaphragm and the conducting area may be measured to determine an amount of pressure being applied to the diaphragm.