Invention Grant
US07564718B2 Method for programming a block of memory cells, non-volatile memory device and memory card device
失效
用于编程存储器单元，非易失性存储器件和存储卡器件的块的方法
- Patent Title: Method for programming a block of memory cells, non-volatile memory device and memory card device
- Patent Title (中): 用于编程存储器单元，非易失性存储器件和存储卡器件的块的方法
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Application No.: US11402649Application Date: 2006-04-12
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Publication No.: US07564718B2Publication Date: 2009-07-21
- Inventor: Konrad Seidel , Uwe Augustin
- Applicant: Konrad Seidel , Uwe Augustin
- Applicant Address: DE Dresden
- Assignee: Infineon Technologies Flash GmbH & Co. KG
- Current Assignee: Infineon Technologies Flash GmbH & Co. KG
- Current Assignee Address: DE Dresden
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/06
Abstract:
A method is provided for programming a block of memory cells of a non-volatile memory device. A first group of memory cells of the block of memory cells is selected. At least one programming pulse is programmed into all memory cells of the first group. A threshold level is detected for each one of the memory cells of the first group only. The first group of memory cells is verified by comparing each one of the detected threshold levels with predefined target levels provided for each one of the first group of memory cells.
Public/Granted literature
- US20070242518A1 Method for programming a block of memory cells, non-volatile memory device and memory card device Public/Granted day:2007-10-18
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