发明授权
- 专利标题: SOI by oxidation of porous silicon
- 专利标题(中): SOI通过多孔硅的氧化
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申请号: US10674648申请日: 2003-09-30
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公开(公告)号: US07566482B2公开(公告)日: 2009-07-28
- 发明人: Kwang Su Choe , Keith E. Fogel , Devendra K. Sadana
- 申请人: Kwang Su Choe , Keith E. Fogel , Devendra K. Sadana
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 Louis Percello, Esq.
- 主分类号: C23C14/48
- IPC分类号: C23C14/48 ; C23C14/08 ; C23C14/58 ; H01L21/265 ; H01L21/316
摘要:
A method in which a SOI substrate structure is fabricated by oxidation of graded porous Si is provided. The graded porous Si is formed by first implanting a dopant (p- or n-type) into a Si-containing substrate, activating the dopant using an activation anneal step and then anodizing the implanted and activated dopant region in a HF-containing solution. The graded porous Si has a relatively coarse top layer and a fine porous layer that is buried beneath the top layer. Upon a subsequent oxidation step, the fine buried porous layer is converted into a buried oxide, while the coarse top layer coalesces into a solid Si-containing over-layer by surface migration of Si atoms.
公开/授权文献
- US20050067294A1 SOI by oxidation of porous silicon 公开/授权日:2005-03-31