发明授权
- 专利标题: Power saving sensing scheme for solid state memory
- 专利标题(中): 固态存储器的省电感测方案
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申请号: US11847559申请日: 2007-08-30
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公开(公告)号: US07567465B2公开(公告)日: 2009-07-28
- 发明人: Chulmin Jung , Kang Yong Kim
- 申请人: Chulmin Jung , Kang Yong Kim
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Knobbe, Martens, Olson & Bear LLP
- 主分类号: G11C7/00
- IPC分类号: G11C7/00
摘要:
Methods and apparatus are disclosed, such as those involving a solid state memory device. One such method includes selecting a plurality of memory cells in a memory array. States of a plurality of data bits stored in the selected plurality of memory cells are determined. In determining the states of the plurality of data bits, a portion of the plurality of data bits are sensed faster than others. The plurality of data bits are sequentially provided as an output. In one embodiment, the portion of the plurality of data bits includes the first bit of the sequential output of the memory device.
公开/授权文献
- US20090059707A1 POWER SAVING SENSING SCHEME FOR SOLID STATE MEMORY 公开/授权日:2009-03-05