发明授权
US07567478B2 Leakage optimized memory 失效
泄漏优化内存

  • 专利标题: Leakage optimized memory
  • 专利标题(中): 泄漏优化内存
  • 申请号: US11868576
    申请日: 2007-10-08
  • 公开(公告)号: US07567478B2
    公开(公告)日: 2009-07-28
  • 发明人: Jeffrey S. Brown
  • 申请人: Jeffrey S. Brown
  • 申请人地址: US CA Milpitas
  • 专利权人: LSI Corporation
  • 当前专利权人: LSI Corporation
  • 当前专利权人地址: US CA Milpitas
  • 代理商 Christopher P. Maiorana, P.C.
  • 主分类号: G11C5/14
  • IPC分类号: G11C5/14 G11C8/14
Leakage optimized memory
摘要:
A method of power optimization in a memory is disclosed. The method generally includes the steps of (A) dividing a plurality of bit cells in a design of the memory into (i) a plurality of first rows storing programmed data and (ii) at least one second row storing only padding data, (B) adjusting the design such that a second power consumption in each of the second rows is lower than a first power consumption in each of the first rows and (C) generating a file defining the design as adjusted.
公开/授权文献
信息查询
0/0