发明授权
- 专利标题: Leakage optimized memory
- 专利标题(中): 泄漏优化内存
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申请号: US11868576申请日: 2007-10-08
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公开(公告)号: US07567478B2公开(公告)日: 2009-07-28
- 发明人: Jeffrey S. Brown
- 申请人: Jeffrey S. Brown
- 申请人地址: US CA Milpitas
- 专利权人: LSI Corporation
- 当前专利权人: LSI Corporation
- 当前专利权人地址: US CA Milpitas
- 代理商 Christopher P. Maiorana, P.C.
- 主分类号: G11C5/14
- IPC分类号: G11C5/14 ; G11C8/14
摘要:
A method of power optimization in a memory is disclosed. The method generally includes the steps of (A) dividing a plurality of bit cells in a design of the memory into (i) a plurality of first rows storing programmed data and (ii) at least one second row storing only padding data, (B) adjusting the design such that a second power consumption in each of the second rows is lower than a first power consumption in each of the first rows and (C) generating a file defining the design as adjusted.
公开/授权文献
- US20090091999A1 LEAKAGE OPTIMIZED MEMORY 公开/授权日:2009-04-09
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