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US07569500B2 ALD metal oxide deposition process using direct oxidation 失效
ALD金属氧化物沉积工艺使用直接氧化

ALD metal oxide deposition process using direct oxidation
摘要:
Methods of forming metal compounds such as metal oxides or metal nitrides by sequentially introducing and then reacting metal organic compounds with ozone one or with oxygen radicals or nitrogen radicals formed in a remote plasma chamber. The metal compounds have surprisingly and significantly improved uniformity when deposited by atomic layer deposition with cycle times of at least 10 seconds. The metal compounds also do not contain detectable carbon when the metal organic compound is vaporized at process conditions in the absence of solvents or excess ligands.
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