发明授权
- 专利标题: ALD metal oxide deposition process using direct oxidation
- 专利标题(中): ALD金属氧化物沉积工艺使用直接氧化
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申请号: US11421283申请日: 2006-05-31
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公开(公告)号: US07569500B2公开(公告)日: 2009-08-04
- 发明人: Craig R. Metzner , Shreyas S. Kher , Vidyut Gopal , Shixue Han , Shankarram A. Athreya
- 申请人: Craig R. Metzner , Shreyas S. Kher , Vidyut Gopal , Shixue Han , Shankarram A. Athreya
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Patterson & Sheridan, LLP
- 主分类号: H01L21/31
- IPC分类号: H01L21/31
摘要:
Methods of forming metal compounds such as metal oxides or metal nitrides by sequentially introducing and then reacting metal organic compounds with ozone one or with oxygen radicals or nitrogen radicals formed in a remote plasma chamber. The metal compounds have surprisingly and significantly improved uniformity when deposited by atomic layer deposition with cycle times of at least 10 seconds. The metal compounds also do not contain detectable carbon when the metal organic compound is vaporized at process conditions in the absence of solvents or excess ligands.