Invention Grant
- Patent Title: Naphthalene-based semiconductor materials and methods of preparing and use thereof
- Patent Title (中): 基于萘的半导体材料及其制备和使用方法
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Application No.: US11811902Application Date: 2007-06-12
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Publication No.: US07569693B2Publication Date: 2009-08-04
- Inventor: Tobin J. Marks , Michael R. Wasielewski , Antonio Facchetti , Brooks A. Jones
- Applicant: Tobin J. Marks , Michael R. Wasielewski , Antonio Facchetti , Brooks A. Jones
- Applicant Address: US IL Evanston
- Assignee: Northwestern University
- Current Assignee: Northwestern University
- Current Assignee Address: US IL Evanston
- Agency: K&L Gates LLP
- Main IPC: C07D471/02
- IPC: C07D471/02 ; H01L21/20
Abstract:
Provided are mono- and diimide naphthalene compounds for use in the fabrication of various device structures. In some embodiments, the naphthalene core of these compounds are mono-, di-, or tetra-substituted with cyano group(s) or other electron-withdrawing substituents or moieties. Such mono- and diimide naphthalene compounds also can be optionally N-substituted.
Public/Granted literature
- US20080021220A1 Naphthalene-based semiconductor materials and methods of preparing and use thereof Public/Granted day:2008-01-24
Information query
