发明授权
- 专利标题: Gallium nitride material transistors and methods associated with the same
- 专利标题(中): 氮化镓材料晶体管和与之相关的方法
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申请号: US12059182申请日: 2008-03-31
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公开(公告)号: US07569871B2公开(公告)日: 2009-08-04
- 发明人: Walter H. Nagy , Jerry Wayne Johnson , Edwin Lanier Piner , Pradeep Rajagopal , John Claassen Roberts , Sameer Singhal , Robert Joseph Therrien , Andrei Vescan , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook , Allen W. Hanson , Kevin J. Linthicum
- 申请人: Walter H. Nagy , Jerry Wayne Johnson , Edwin Lanier Piner , Pradeep Rajagopal , John Claassen Roberts , Sameer Singhal , Robert Joseph Therrien , Andrei Vescan , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook , Allen W. Hanson , Kevin J. Linthicum
- 申请人地址: US NC Durham
- 专利权人: Nitronex Corporation
- 当前专利权人: Nitronex Corporation
- 当前专利权人地址: US NC Durham
- 代理机构: Wolf, Greenfield & Sacks, P.C.
- 主分类号: H01L31/072
- IPC分类号: H01L31/072
摘要:
Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.