发明授权
- 专利标题: Method of fabricating nickel silicide
- 专利标题(中): 制造硅化镍的方法
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申请号: US11685209申请日: 2007-03-13
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公开(公告)号: US07572722B2公开(公告)日: 2009-08-11
- 发明人: Yi-Wei Chen , Chao-Ching Hsieh , Yi-Yiing Chiang , Tzung-Yu Hung , Yu-Lan Chang , Po-Chao Tsao , Chang-Chi Huang , Ming-Tsung Chen
- 申请人: Yi-Wei Chen , Chao-Ching Hsieh , Yi-Yiing Chiang , Tzung-Yu Hung , Yu-Lan Chang , Po-Chao Tsao , Chang-Chi Huang , Ming-Tsung Chen
- 申请人地址: TW Hsin-Chu
- 专利权人: United Microelectronics Corp.
- 当前专利权人: United Microelectronics Corp.
- 当前专利权人地址: TW Hsin-Chu
- 代理商 Winston Hsu
- 主分类号: H01L21/3205
- IPC分类号: H01L21/3205
摘要:
A semiconductor device having nickel silicide and a method for fabricating nickel silicide. A semiconductor substrate having a plurality of doped regions is provided. Subsequently, a nickel layer is formed on the semiconductor substrate, and a first rapid thermal process (RTP) is performed to react the nickel layer with the doped regions disposed there under. Thereafter, the unreacted nickel layer is removed, and a second rapid thermal process is performed to form a semiconductor device having nickel silicide. The second rapid thermal process is a spike anneal process whose process temperature is between 400 and 600° C.
公开/授权文献
- US20070167009A1 METHOD OF FABRICATING NICKEL SILICIDE 公开/授权日:2007-07-19
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