发明授权
US07573774B2 Multi-chip semiconductor memory device having internal power supply voltage generation circuit for decreasing current consumption
有权
具有用于降低电流消耗的内部电源电压产生电路的多芯片半导体存储器件
- 专利标题： Multi-chip semiconductor memory device having internal power supply voltage generation circuit for decreasing current consumption
- 专利标题（中）： 具有用于降低电流消耗的内部电源电压产生电路的多芯片半导体存储器件
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申请号： US11542105申请日： 2006-10-04
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公开(公告)号： US07573774B2公开(公告)日： 2009-08-11
- 发明人: Oh Suk Kwon , Dae Seok Byeon
- 申请人： Oh Suk Kwon , Dae Seok Byeon
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2005-0093662 20051006
- 主分类号： G11C5/14
- IPC分类号： G11C5/14
摘要：
A multi-chip semiconductor memory device includes of a plurality of memory chips sharing a predetermined chip enable signal. Each of the plurality of memory chips includes an active internal power supply generation circuit configured to convert an external power supply voltage into an internal power supply voltage and to be disabled in response to deactivation of a predetermined drive control signal. Each of the plurality of memory chips also includes a conversion control circuit for generating the drive control signal, wherein the drive control signal is deactivated in an interval in which any of the plurality of memory chips is in an active interval.
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