Invention Grant
US07579263B2 Threading-dislocation-free nanoheteroepitaxy of Ge on Si using self-directed touch-down of Ge through a thin SiO2 layer
有权
使用Ge通过薄SiO 2层的自我定向触摸，Si上的Ge的穿线 - 无位错纳米外延
- Patent Title: Threading-dislocation-free nanoheteroepitaxy of Ge on Si using self-directed touch-down of Ge through a thin SiO2 layer
- Patent Title (中): 使用Ge通过薄SiO 2层的自我定向触摸，Si上的Ge的穿线 - 无位错纳米外延
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Application No.: US10935228Application Date: 2004-09-08
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Publication No.: US07579263B2Publication Date: 2009-08-25
- Inventor: Sang Han , Qiming Li
- Applicant: Sang Han , Qiming Li
- Applicant Address: US NM Albuquerque
- Assignee: STC.UNM
- Current Assignee: STC.UNM
- Current Assignee Address: US NM Albuquerque
- Agency: MH2 Technology Law Group LLP
- Main IPC: H01L21/20
- IPC: H01L21/20 ; C30B25/02
Abstract:
A method of forming a virtually defect free lattice mismatched nanoheteroepitaxial layer is disclosed. The method includes forming an interface layer on a portion of a substrate. A plurality of seed pads are then formed by self-directed touchdown by exposing the interface layer to a material comprising a semiconductor material. The plurality of seed pads, having an average width of about 1 nm to 10 nm, are interspersed within the interface layer and contact the substrate. An epitaxial layer is then formed by lateral growth of the seed pads over the interface layer.
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