发明授权
US07579602B2 Ion implantation with a collimator magnet and a neutral filter magnet
有权
离子注入与准直器磁体和中性滤光片磁铁
- 专利标题： Ion implantation with a collimator magnet and a neutral filter magnet
- 专利标题（中）： 离子注入与准直器磁体和中性滤光片磁铁
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申请号： US11615317申请日： 2006-12-22
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公开(公告)号： US07579602B2公开(公告)日： 2009-08-25
- 发明人: Victor M. Benveniste , Christopher W. Campbell , Frank Sinclair
- 申请人： Victor M. Benveniste , Christopher W. Campbell , Frank Sinclair
- 申请人地址： US MA Gloucester
- 专利权人： Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人： Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址： US MA Gloucester
- 主分类号： H01J37/147
- IPC分类号： H01J37/147 ; H01J37/317 ; H01J1/50
摘要：
This disclosure describes an ion implanter having a collimator magnet that is configured to shape an ion beam. A first deceleration stage is configured to manipulate energy of the ion beam shaped by the collimator magnet. A neutral filter magnet is configured to filter neutral atoms from the ion beam passing through the first deceleration stage.
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