Invention Grant
US07579602B2 Ion implantation with a collimator magnet and a neutral filter magnet
有权
离子注入与准直器磁体和中性滤光片磁铁
- Patent Title: Ion implantation with a collimator magnet and a neutral filter magnet
- Patent Title (中): 离子注入与准直器磁体和中性滤光片磁铁
-
Application No.: US11615317Application Date: 2006-12-22
-
Publication No.: US07579602B2Publication Date: 2009-08-25
- Inventor: Victor M. Benveniste , Christopher W. Campbell , Frank Sinclair
- Applicant: Victor M. Benveniste , Christopher W. Campbell , Frank Sinclair
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01J37/147
- IPC: H01J37/147 ; H01J37/317 ; H01J1/50
Abstract:
This disclosure describes an ion implanter having a collimator magnet that is configured to shape an ion beam. A first deceleration stage is configured to manipulate energy of the ion beam shaped by the collimator magnet. A neutral filter magnet is configured to filter neutral atoms from the ion beam passing through the first deceleration stage.
Public/Granted literature
- US20080149845A1 ION IMPLANTATION WITH A COLLIMATOR MAGNET AND A NEUTRAL FILTER MAGNET Public/Granted day:2008-06-26
Information query
