Invention Grant
- Patent Title: Carbon nanotube resonator transistor and method of making same
- Patent Title (中): 碳纳米管谐振晶体管及其制造方法
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Application No.: US11068750Application Date: 2005-03-02
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Publication No.: US07579618B2Publication Date: 2009-08-25
- Inventor: John Douglas Adam
- Applicant: John Douglas Adam
- Applicant Address: US CA Los Angeles
- Assignee: Northrop Grumman Corporation
- Current Assignee: Northrop Grumman Corporation
- Current Assignee Address: US CA Los Angeles
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Main IPC: H01L31/00
- IPC: H01L31/00
Abstract:
A resonant transistor includes a substrate, a source and a drain formed on the substrate, an input electrode and a carbon nanotube gate. A gap is formed between the source and the drain. The input electrode is formed on the substrate. The carbon nanotube gate is clamped on one end by a contact electrode and positioned, preferably cantilevered, over the gap and over the input electrode.
Public/Granted literature
- US20060197076A1 Carbon nanotube resonator transistor and method of making same Public/Granted day:2006-09-07
Information query
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