Invention Grant
- Patent Title: Capacitor having high electrostatic capacity, integrated circuit device including the capacitor and method of fabricating the same
- Patent Title (中): 具有高静电容量的电容器,包括该电容器的集成电路器件及其制造方法
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Application No.: US11706972Application Date: 2007-02-16
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Publication No.: US07579643B2Publication Date: 2009-08-25
- Inventor: Byung-jun Oh , Kyung-tae Lee , Yoon-hae Kim
- Applicant: Byung-jun Oh , Kyung-tae Lee , Yoon-hae Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0018423 20060224
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/94

Abstract:
A capacitor may include a first electrode, a second electrode, a low dielectric layer, and/or a high dielectric layer. The first electrode may include at least one first electrode branch. The second electrode may face the first electrode and include at least one second electrode branch. The low dielectric layer may be formed between the first electrode branch and the second electrode branch. The high dielectric layer may be formed between the first electrode branch and the second electrode branch. The high dielectric layer may have a higher dielectric constant than the low dielectric layer.
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