发明授权
- 专利标题: Adjustable on-chip sub-capacitor design
- 专利标题(中): 可调片上子电容设计
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申请号: US11436249申请日: 2006-05-18
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公开(公告)号: US07579644B2公开(公告)日: 2009-08-25
- 发明人: Jonghae Kim , Moon J. Kim , Jean-Olivier Plouchart , Robert E. Trzcinski
- 申请人: Jonghae Kim , Moon J. Kim , Jean-Olivier Plouchart , Robert E. Trzcinski
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Driggs, Hogg, Daugherty & Del Zoppo Co., LPA
- 代理商 James A. Lucas
- 主分类号: H01L29/94
- IPC分类号: H01L29/94
摘要:
One or more on-chip VNCAP or MIMCAP capacitors utilize a variable MOS capacitor to improve the uniform capacitance value of the capacitors. This permits the production of silicon semiconductor chips on which are mounted capacitors having capacitive values that are precisely adjusted to be within a range of between about 1% and 5% of their design value. This optimization can be achieved by the use of a back-to-back connection between a pair of the variable MOS capacitors for DC decoupling. It involves the parallelization of on-chip BEOL capacitance of VNCAP and/or MIMCAP capacitors by the insertion in the FEOL of pairs of back-to-back variable MOS capacitors.
公开/授权文献
- US20070267673A1 Adjustable on-chip sub-capacitor design 公开/授权日:2007-11-22