发明授权
- 专利标题: Charge coupled device
- 专利标题(中): 电荷耦合器件
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申请号: US11656501申请日: 2007-01-23
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公开(公告)号: US07580073B2公开(公告)日: 2009-08-25
- 发明人: Katsumi Ikeda , Makoto Kobayashi
- 申请人: Katsumi Ikeda , Makoto Kobayashi
- 申请人地址: JP Tokyo
- 专利权人: Fujifilm Corporation
- 当前专利权人: Fujifilm Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Birch, Stewart, Kolasch & Birch, LLP
- 优先权: JPP2006-017763 20060126
- 主分类号: H04N3/14
- IPC分类号: H04N3/14 ; H04N5/335
摘要:
A charge coupled device comprises: a semiconductor substrate of one conductivity type; a one-dimensional first charge coupled device including a plurality of continuous electrodes arranged in a one-dimensional array on the semiconductor substrate and a channel region formed below each of the electrodes; a second charge coupled device that is continuous to an end of the first charge coupled device and includes two branched portions, each of the two branched portions comprising at least one electrode arranged in the one-dimensional array; a detecting portion that detects as an electrical signal a charge transferred by each of the branch portions of the second charge coupled device; and a signal output portion that outputs a signal detected by the detecting portion, wherein distal one of the electrodes of the first charge coupled device, which is adjacent to the second charge coupled device, is formed independently from the other ones of the electrodes of the first charge coupled device so as to be fixed at a predetermined dc potential.
公开/授权文献
- US20080030607A1 Charge coupled device 公开/授权日:2008-02-07
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