Invention Grant
- Patent Title: Method of forming a phase changeable structure
- Patent Title (中): 形成相变结构的方法
-
Application No.: US11625142Application Date: 2007-01-19
-
Publication No.: US07582568B2Publication Date: 2009-09-01
- Inventor: Young-Soo Lim , Jun-Soo Bae
- Applicant: Young-Soo Lim , Jun-Soo Bae
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Marger Johnson & McCollom, P.C.
- Priority: KR10-2006-0006057 20060120; KR10-2007-0005007 20070117
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
The present invention relates to a method of forming a phase changeable structure wherein an upper electrode is formed on a phase changeable layer. A material including fluorine can be provided to the phase changeable layer and the upper electrode. The phase changeable layer can be etched to form a phase changeable pattern. Oxygen plasma or water vapor plasma can then be provided to the upper electrode and the phase changeable pattern.
Public/Granted literature
- US20070224796A1 METHOD OF FORMING A PHASE CHANGEABLE STRUCTURE Public/Granted day:2007-09-27
Information query
IPC分类:
