发明授权
- 专利标题： Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same
- 专利标题（中）： 旋涂玻璃组合物及其半导体制造工艺中使用其形成氧化硅层的方法
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申请号： US11889123申请日： 2007-08-09
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公开(公告)号： US07582573B2公开(公告)日： 2009-09-01
- 发明人: Jung-Ho Lee , Jun-Hyun Cho , Jung-Sik Choi , Dong-Jun Lee
- 申请人： Jung-Ho Lee , Jun-Hyun Cho , Jung-Sik Choi , Dong-Jun Lee
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, DIckey & Pierce, P.L.C.
- 优先权： KR2003-79508 20031111
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A spin-on glass (SOG) composition and a method of forming a silicon oxide layer utilizing the SOG composition are disclosed. The method includes coating on a semiconductor substrate having a surface discontinuity, an SOG composition containing polysilazane having a compound of the formula —(SiH2NH)n— wherein n represents a positive integer, a weight average molecular weight within the range of about 3,300 to 3,700 to form a planar SOG layer. The SOG layer is converted to a silicon oxide layer with a planar surface by curing the SOG layer. Also disclosed is a semiconductor device made by the method.
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