发明授权
US07582868B2 Method of nano thin film thickness measurement by auger electron spectroscopy
有权
通过螺旋电子能谱法测量纳米薄膜厚度的方法
- 专利标题: Method of nano thin film thickness measurement by auger electron spectroscopy
- 专利标题(中): 通过螺旋电子能谱法测量纳米薄膜厚度的方法
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申请号: US11192199申请日: 2005-07-27
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公开(公告)号: US07582868B2公开(公告)日: 2009-09-01
- 发明人: Zhi Cheng Jiang , Shan Dan Li , Yuen Kwan Kam , Yi Wei Liu
- 申请人: Zhi Cheng Jiang , Shan Dan Li , Yuen Kwan Kam , Yi Wei Liu
- 申请人地址: HK Shatin, N.T.
- 专利权人: SAE Magnetics (H.K.) Ltd.
- 当前专利权人: SAE Magnetics (H.K.) Ltd.
- 当前专利权人地址: HK Shatin, N.T.
- 代理机构: Kenyon & Kenyon LLP
- 优先权: WOPCT/CN2004/001529 20041227
- 主分类号: G01N23/00
- IPC分类号: G01N23/00
摘要:
A system and method for measuring the thickness of an ultra-thin multi-layer film on a substrate is disclosed. A physical model of an ultra-thin multilayer structure and Auger electron emission from the nano-multilayer structure is built. A mathematical model for the Auger Electron Spectroscopy (AES) measurement of the multilayer thin film thickness is derived according to the physical model. Auger electron spectroscopy (AES) is first performed on a series of calibration samples. The results are entered into the mathematical model to determine the parameters in the mathematical equation. The parameters may be calibrated by the correlation measurements of the alternate techniques. AES analysis is performed on the ultra-thin multi-layer film structure. The results are entered into the mathematical model and the thickness is calculated.