发明授权
- 专利标题： Method of manufacturing semiconductor device with regard to film thickness of gate oxide film
- 专利标题（中）： 关于栅极氧化膜的膜厚制造半导体器件的方法
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申请号： US11723092申请日： 2007-03-16
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公开(公告)号： US07585736B2公开(公告)日： 2009-09-08
- 发明人: Yoichi Fukushima
- 申请人： Yoichi Fukushima
- 申请人地址： JP Tokyo
- 专利权人： Elpida Memory, Inc.
- 当前专利权人： Elpida Memory, Inc.
- 当前专利权人地址： JP Tokyo
- 代理机构： Young & Thompson
- 优先权： JP2006-072048 20060316; JP2007-014254 20070124
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method of manufacturing a semiconductor device includes steps (a) to (d). The step (a) is a step of forming a first insulating film and a nitride film on a semiconductor substrate in this order. The step (b) is a step of removing said first insulating film and said nitride film in a first region while leaving said first insulating film and said nitride film in a second region. The step (c) is a step of forming a second insulating film on said semiconductor substrate in said first region. Here, a thickness of said second insulating film is different from that of said first insulating film. A third insulating film is formed on said nitride film in said second region along with the formation of said second insulating film. The step (d) is a step of removing said third insulating film and said nitride film in said second region.
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