Invention Grant
- Patent Title: Method of growing carbon nanotubes and method of manufacturing field emission device having the same
- Patent Title (中): 生长碳纳米管的方法及其制造方法
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Application No.: US11350864Application Date: 2006-02-10
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Publication No.: US07585770B2Publication Date: 2009-09-08
- Inventor: Young-Jun Park , Ha-Jin Kim
- Applicant: Young-Jun Park , Ha-Jin Kim
- Applicant Address: KR Maetan-dong, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung SDI Co., Ltd.
- Current Assignee: Samsung SDI Co., Ltd.
- Current Assignee Address: KR Maetan-dong, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agent Robert E. Bushnell, Esq.
- Priority: KR10-2005-0012441 20050215
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
In a method of forming carbon nanotubes (CNTs) and a method of manufacturing a field emission display (FED) device using the CNTs, the method includes preparing a substrate on which a silicon layer is formed, sequentially forming a buffer layer and a catalyst metal layer on the silicon layer, partly forming metal silicide domains by diffusion between the silicon layer, the buffer layer and the catalyst metal layer by annealing the substrate, and growing CNTs on a surface of the catalyst metal layer.
Public/Granted literature
- US20060252251A1 Method of growing carbon nanotubes and method of manufacturing field emission device having the same Public/Granted day:2006-11-09
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