发明授权
- 专利标题： Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device
- 专利标题（中）： 宽带隙器件与具有比宽带隙器件更低的雪崩击穿电压和更高的正向压降的器件并联
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申请号： US11828283申请日： 2007-07-25
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公开(公告)号： US07586156B2公开(公告)日： 2009-09-08
- 发明人: Joseph A. Yedinak , Richard L. Woodin , Christopher Lawrence Rexer , Praveen Muraleedharan Shenoy , Kwanghoon Oh , Chongman Yun
- 申请人： Joseph A. Yedinak , Richard L. Woodin , Christopher Lawrence Rexer , Praveen Muraleedharan Shenoy , Kwanghoon Oh , Chongman Yun
- 申请人地址： US ME South Portland
- 专利权人： Fairchild Semiconductor Corporation
- 当前专利权人： Fairchild Semiconductor Corporation
- 当前专利权人地址： US ME South Portland
- 代理机构： Hiscock & Barclay, LLP
- 代理商 Thomas R. FitzGerald
- 主分类号： H01L27/02
- IPC分类号： H01L27/02
摘要：
A wide bandgap device in parallel with a device having a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device.
公开/授权文献
- US20080042143A1 AVALANCHE PROTECTION FOR WIDE BANDGAP DEVICES 公开/授权日：2008-02-21
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