Invention Grant
- Patent Title: Production of high-purity, large-volume monocrystals that are especially radiation-resistant from crystal shards
- Patent Title (中): 生产高纯度，大容量的单晶体，特别是从晶体碎片防辐射
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Application No.: US11609626Application Date: 2006-12-12
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Publication No.: US07588637B2Publication Date: 2009-09-15
- Inventor: Andreas Weisleder , Matthias Mueller , Joerg Kandler , Andreas Menzel , Rainer Guett
- Applicant: Andreas Weisleder , Matthias Mueller , Joerg Kandler , Andreas Menzel , Rainer Guett
- Applicant Address: DE Mainz
- Assignee: Schott AG
- Current Assignee: Schott AG
- Current Assignee Address: DE Mainz
- Agent Michael J. Striker
- Priority: DE102005059531 20051213
- Main IPC: C30B13/28
- IPC: C30B13/28
Abstract:
A method for producing high-purity, large-volume monocrystals that are especially radiation-resistant and have low intrinsic birefringence. From a melt of crystalline raw material, with controlled cooling and solidification, a crystal is generated. As the crystalline raw material, shards and/or waste from already-grown crystals is used, and the re-used raw material 1) upon visual observation in daylight has no color; and 2) upon illumination with a white-light lamp in a darkroom a) has no or at maximum a just barely perceivable reddish and/or bluish fluorescence; and b) has no or at maximum a just barely perceivable diffuse scattering; and c) has no or only slight discrete scattering of at maximum two visually perceivable scattering centers per dm3. In this way, crystals can be obtained which after tempering have a BSDF value of
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