发明授权
- 专利标题： Fabrication of semiconductor devices using anti-reflective coatings
- 专利标题（中）： 使用抗反射涂层制造半导体器件
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申请号： US11698072申请日： 2007-01-26
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公开(公告)号： US07589015B2公开(公告)日： 2009-09-15
- 发明人: Gurtej S. Sandhu , Zhiping Yin
- 申请人： Gurtej S. Sandhu , Zhiping Yin
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc
- 当前专利权人： Micron Technology, Inc
- 当前专利权人地址： US ID Boise
- 代理机构： Dickstein Shapiro LLP
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
Techniques are disclosed for fabricating a device using a photolithographic process. The method includes providing a first anti-reflective coating over a surface of a substrate. A layer which is transparent to a wavelength of light used during the photolithographic process is provided over the first anti-reflective coating, and a photosensitive material is provided above the transparent layer. The photosensitive material is exposed to a source of radiation including the wavelength of light. Preferably, the first anti-reflective coating extends beneath substantially the entire transparent layer. The complex refractive index of the first anti-reflective coating can be selected to maximize the absorption at the first anti-reflective coating to reduce notching of the photosensitive material.
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