发明授权
- 专利标题： Semiconductor device and method of fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
-
申请号： US11976972申请日： 2007-10-30
-
公开(公告)号： US07589357B2公开(公告)日： 2009-09-15
- 发明人: Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
- 申请人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
- 申请人地址： JP Osaka
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2003-031416 20030207; JP2003-339421 20030930
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.
公开/授权文献
- US20080073664A1 Semiconductor device and method of fabricating the same 公开/授权日：2008-03-27
信息查询
IPC分类:
